Dual-mode, dual-load high efficiency RF power amplifier
US7427894B2 · kind B2 · utility
9Cited by
11References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 6, 2006 |
| Grant date | Sep 23, 2008 |
| Priority date | — |
| Expiry date | Apr 3, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H7/38
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A radio frequency (RF) amplifier has a driver device, an output device, and first and second impedance transformation networks. In a first operating mode the output device is turned on and the first impedance transformation network presents a first load impedance to the output device. In a second operating mode, the output device is turned off and the second impedance transformation network connects an output of the driver device to the first impedance transformation network and presents a second load impedance to the driver device. The second load impedance is greater than the first load impedance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.