Resist pattern forming method and semiconductor device fabrication method
US7429446B2 · kind B2 · utility
14Cited by
2References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 19, 2004 |
| Grant date | Sep 30, 2008 |
| Priority date | — |
| Expiry date | Oct 5, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/023
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A photoresist film 12 is formed on a substrate 10. In the photoresist film 12, an opening 13 having higher hydrophilicity and higher affinity with a chemical liquid 16 for swelling the photoresist film at upper part of the sidewall is formed down to the substrate 10. The chemical liquid 16 is reacted with the photoresist film 12 with the opening formed in to swell the photoresist film 16 to thereby reverse-taper the sidewall of the opening. Whereby the photoresist film having an opening diameter beyond a resolution of the photoresist material and the sidewall of the opening reverse-tapered can be easily formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.