Low profile wire bond for an electron sensing device in an image intensifier tube
US7429724B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 21, 2006 |
| Grant date | Sep 30, 2008 |
| Priority date | — |
| Expiry date | Nov 21, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/10155
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An electron sensing device for receiving electrons from an output surface of an electron gain device includes a silicon die having an active surface area for positioning below the output surface of the electron gain device. An array of first bond pads is disposed on a periphery of the active surface area of the silicon die. A ceramic carrier is positioned below the silicon die, including a second array of bond pads disposed on the ceramic carrier and arranged in a substantially vertical alignment to the first array of bond pads. A plurality of conductive via holes is disposed in the ceramic carrier for electrically connecting the first array of bond pads to the second array of bond pads. When the imager is positioned below the electron gain device, a tight vertical clearance is formed between the output surface of the electron gain device and the active surface area of the electron sensing device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.