High power light emitting diode
US7429755B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 21, 2006 |
| Grant date | Sep 30, 2008 |
| Priority date | — |
| Expiry date | Jun 21, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/819
Abstract
A high power LED comprises a substrate. An N-type semiconductor layer, an active layer and a P-type semiconductor layer are sequentially deposited on the substrate. A semi-insulator layer or a non-N-type semiconductor layer can be interposed between the N-type semiconductor layer and substrate. At least one N-type electrode is connected to the N-type semiconductor layer and is exposed to an opening of the active layer and P-type semiconductor layer. The N-type electrode with a centralized pattern is formed on the middle of the LED. Furthermore, at least one P-type electrode is coupled to the P-type semiconductor layer. The P-type electrode is arranged like a closed ring or an open ring surrounding the N-type electrode. Therefore, the distribution of current paths is dispersed, and illumination areas are simultaneously uniform.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.