Light-emitting diode and manufacturing method thereof
US7432117B2 · kind B2 · utility
7Cited by
2References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 22, 2005 |
| Grant date | Oct 7, 2008 |
| Priority date | — |
| Expiry date | Sep 1, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8581
Abstract
A light-emitting diode and the manufacturing method thereof are provided, wherein the light-emitting diode comprises an epitaxial structure, a bonding layer and a composite substrate. The bonding layer located over one side of the epitaxial structure is used for adhering the composite substrate to the epitaxial structure. The composite substrate comprises a patterned silicon layer penetrated through by a plurality of openssilicon, and a metal layer covering the patterned silicon layer, wherein a portion of the metal layer is filled into the opens and contacts the bonding layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.