Methods of fabricating silicon-on-insulator substrates having a laser-formed single crystalline film
US7432173B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 12, 2007 |
| Grant date | Oct 7, 2008 |
| Priority date | — |
| Expiry date | Mar 12, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02691
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In some methods of fabricating a silicon-on-insulator substrate, a semiconductor substrate is provided that includes a single crystalline structure within at least a defined region thereof. A first insulating film is formed on the defined region of the semiconductor substrate with an opening that exposes a portion of the defined region of the semiconductor substrate having the single crystalline structure. A first non-single crystalline film is formed on the exposed portion of the semiconductor substrate and that at least substantially fills the opening in the first insulating film. A laser beam is generated that heats the first non-single crystalline film to change the first non-single crystalline film into a first single crystalline film having substantially the same single crystalline structure as the defined region of the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.