Quantum dots nucleation layer of lattice mismatched epitaxy
US7432175B2 · kind B2 · utility
Inventors
Key dates
| Filing date | Jan 6, 2006 |
| Grant date | Oct 7, 2008 |
| Priority date | — |
| Expiry date | Aug 17, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/774
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Lattice mismatched epitaxy and methods for lattice mismatched epitaxy are provided. The method includes providing a growth substrate and forming a plurality of quantum dots, such as, for example, AlSb quantum dots, on the growth substrate. The method further includes forming a crystallographic nucleation layer by growth and coalescence of the plurality of quantum dots, wherein the nucleation layer is essentially free from vertically propagating defects. The method using quantum dots can be used to overcome the restraints of critical thickness in lattice mismatched epitaxy to allow effective integration of various existing substrate technologies with device technologies.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.