Avalanche photodiode structure
US7432537B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Nov 23, 2005 |
| Grant date | Oct 7, 2008 |
| Priority date | — |
| Expiry date | Sep 29, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/1468
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
An avalanche photodiode (APD) includes an anode layer, a cathode layer, an absorption layer between the anode layer and the cathode layer, a first multiplying stage between the absorption layer and the cathode layer, a second multiplying stage between the first multiplying stage and the cathode layer, and a carrier relaxation region between the first and second multiplying stages. Each multiplying stage includes, in the direction of drift of electrons, a first layer that is doped with acceptors, a second layer that is substantially undoped, a third layer that is doped with acceptors, a fourth layer that is substantially undoped, and a fifth layer that is doped with donors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.