Method for fabricating a component having an electrical contact region

US7435605B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Stefan Illek · Donaustauf, DE
• Peter Stauss · Regensburg, DE
• Andreas Ploessl · Regensburg, DE
• Gudrun Diepold · Regensburg, DE
• Ines Pietzonka · Donaustauf, DE
• Wilhelm Stein · Dresden, DE
• Ralph Wirth · Lappersdorf, DE
• Walter Wegleiter · Nittendorf, DE

Key dates

• Filing date: Jul 9, 2007
• Grant date: Oct 14, 2008
• Expiry date: Jul 9, 2027

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/933

Abstract

A method for fabricating a component having an electrical contact region on an n-conducting AlGaInP-based or AlGaInAs-based outer layer of an epitaxially grown semiconductor layer sequence, in which electrical contact material, which includes Au and at least one dopant, is applied and the outer layer is then annealed. The dopant contains at least one element selected from the group consisting of Ge, Si, Sn and Te. Also, a component is disclosed which includes an epitaxially grown semiconductor layer sequence with an active zone which emits electromagnetic radiation, the semiconductor layer sequence having an n-conducting AlGaInP-based or AlGaInAs-based outer layer, to which an electrical contact region is applied using the method described.