Epitaxial growth method
US7435666B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 18, 2006 |
| Grant date | Oct 14, 2008 |
| Priority date | — |
| Expiry date | Nov 10, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is an epitaxial growth method for forming a high-quality crystalline growth semiconductor wafer. The method includes forming a buffer layer on a single crystalline wafer using a single crystalline material; forming a mask layer on the buffer layer; forming a plurality of holes in the mask layer using a laser to expose portions of the buffer layer; forming wells having a predetermined depth in the exposed portions of the buffer layer by injecting an etchant into the holes; removing the mask layer and annealing the buffer layer to form a porous buffer layer having cavities obtained by the wells; and forming a crystalline material layer on the porous buffer layer using an epitaxial growth process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.