Method for doping impurities, and for producing a semiconductor device and applied electronic apparatus using a solution containing impurity ions
US7435668B2 · kind B2 · utility
15Cited by
5References
17Claims
0Family size
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Key dates
| Filing date | Jan 24, 2005 |
| Grant date | Oct 14, 2008 |
| Priority date | — |
| Expiry date | Jan 2, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6713
Abstract
A solution containing impurity ions is applied onto the surface of a silicon film to form a solution layer, followed by drying into a compound layer containing the impurities. Heat treatment is performed by irradiation with an energy beam so as to diffuse the impurity atoms in the compound layer toward the silicon film into a source region and a drain region. Subsequently, the compound layer is removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.