Semiconductor device with layer containing polysiloxane compound
US7435989B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 5, 2006 |
| Grant date | Oct 14, 2008 |
| Priority date | — |
| Expiry date | Sep 5, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/626
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a semiconductor device including: a substrate; a layer containing one or more kinds of polymer compounds on the substrate; and an organic semiconductor layer in contact with the layer containing the one or more kinds of polymer compounds, in which at least one kind of the one or more kinds of polymer compounds is a polymer compound having one or more secondary or tertiary aliphatic amino groups, wherein the one or more aliphatic amino groups of the polymer compound having the aliphatic amino groups are bound to at least one of a side chain or a branched chain, and wherein said the layer containing the one or more kinds of polymer compounds contains polysiloxane compounds. With the constitution, a semiconductor device excellent in crystallinity and orientation can be provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.