Nanowire light emitting device and method of fabricating the same
US7435996B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 7, 2005 |
| Grant date | Oct 14, 2008 |
| Priority date | — |
| Expiry date | Apr 9, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K2102/00
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A nanowire light emitting device and a method of fabricating the same are provided. The nanowire light emitting device includes a first conductive layer formed on a substrate, a plurality of nanowires vertically formed on the first conductive layer, each of the nanowires having an n-type doped portion and a p-type doped portion, a light emitting layer between the n-type doped portion and the p-type doped portion, first and second conductive organic polymers filling a space corresponding to the p-type doped portion and the n-type doped portion, respectively, and a second conductive layer formed on the nanowires. The organic polymers dope the corresponding surface of the nanowires by receiving electrons from the corresponding surface of the nanowires or by providing electrons to the surface of the nanowires.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.