Semiconductor chip for optoelectronics and method for the production thereof
US7435999B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 2, 2005 |
| Grant date | Oct 14, 2008 |
| Priority date | — |
| Expiry date | May 2, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8316
Abstract
A semiconductor chip for optoelectronics having a thin-film layer, in which a zone that emits electromagnetic radiation is formed and which has an emission side, a rear side and side faces that connect the rear side to the emission side. A carrier for the thin-film layer is arranged at the rear side thereof and is connected thereto. At least one electrical front side contact structure is formed on the emission side and at least one trench is formed on the rear side. The trench defines at least a single partial region which essentially does not overlap the front side contact structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.