Patent · US Expired

Semiconductor chip for optoelectronics and method for the production thereof

US7435999B2 · kind B2 · utility

9Cited by
6References
34Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMay 2, 2005
Grant dateOct 14, 2008
Priority date
Expiry dateMay 2, 2025

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/8316

Abstract

A semiconductor chip for optoelectronics having a thin-film layer, in which a zone that emits electromagnetic radiation is formed and which has an emission side, a rear side and side faces that connect the rear side to the emission side. A carrier for the thin-film layer is arranged at the rear side thereof and is connected thereto. At least one electrical front side contact structure is formed on the emission side and at least one trench is formed on the rear side. The trench defines at least a single partial region which essentially does not overlap the front side contact structure.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.