Vertical GaN-based LED and method of manufacturing the same

US7436001B2 · kind B2 · utility

Assignee

• SAMSUNG ELECTRONICS CO., LTD. · KR

Inventors

• Jae-Hoon Lee · Seoul, KR
• Bang Won Oh · Seojong-myeon, KR
• Hee Seok Choi · Seoul, KR
• Jeong Tak Oh · Seojong-myeon, KR
• Seok Beom Choi · Daejeon, KR
• Su Yeol Lee · Seojong-myeon, KR

Key dates

• Filing date: Jul 21, 2006
• Grant date: Oct 14, 2008
• Expiry date: Jul 26, 2026

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/816

Abstract

A vertical GaN-based LED and a method of manufacturing the same are provided. The vertical GaN-based LED includes an n-electrode, a first n-type GaN layer, a first AlGaN layer, a GaN layer, a second AlGaN layer, a second n-type GaN layer, an active layer, a p-type GaN layer, and a structure support layer. The first n-type GaN layer has uneven patterns having a plurality of protuberances. The first AlGaN layer is formed under the first n-type GaN layer, and the GaN layer is formed under the first AlGaN layer. The active layer is formed under the second n-type GaN layer, and the p-type GaN layer is formed under the active layer. A p-electrode is formed under the p-type GaN layer, and the structure support layer is formed under the p-electrode.