Via structures and trench structures and dual damascene structures
US7436009B2 · kind B2 · utility
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8Claims
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Assignee
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Key dates
| Filing date | Apr 4, 2007 |
| Grant date | Oct 14, 2008 |
| Priority date | — |
| Expiry date | Apr 4, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76862
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Via hole and trench structures and fabrication methods are disclosed. The structure includes a conductive layer in a dielectric layer, and a via structure in the dielectric layer contacting a portion of a surface of the conductive layer. The via structure includes the conductive liner contacting the portion of the surface of the first conductive layer. A trench structure is formed on the via structure in the dielectric without the conductive liner layer in the trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.