CMOS image sensor
US7436011B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 10, 2005 |
| Grant date | Oct 14, 2008 |
| Priority date | — |
| Expiry date | Nov 10, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/813
Abstract
A CMOS image sensor includes a semiconductor substrate; a pinned photodiode formed in a light-sensing region of the semiconductor substrate, the pinned photodiode comprising a charge-accumulating diffusion region and a surface pinning diffusion region overlying the charge-accumulating diffusion region; a transfer transistor, wherein the transfer transistor has a transfer gate comprising a protruding first gate segment with a first gate dimension and a second gate segment with a second gate dimension that is smaller than the first gate dimension. A first overlapping portion between the protruding first gate segment and the charge-accumulating diffusion region is greater than a second overlapping portion between the second gate segment and the charge-accumulating diffusion region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.