Tri-gated molecular field effect transistor and method of fabricating the same
US7436033B2 · kind B2 · utility
7Cited by
7References
8Claims
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Key dates
| Filing date | May 24, 2005 |
| Grant date | Oct 14, 2008 |
| Priority date | — |
| Expiry date | May 3, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/938
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A tri-gated molecular field effect transistor includes a gate electrode formed on a substrate and having grooves in a source region, a drain region and a channel region, and at least one molecule inserted between the source and drain electrodes in the channel region. The effects of the gate voltage on electrons passing through the channel can be maximized, and a variation gain of current supplied between the source and drain electrodes relative to the gate voltage can be greatly increased. Thus, a molecular electronic circuit having high functionality and reliability can be obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.