Semiconductor element
US7436066B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 6, 2005 |
| Grant date | Oct 14, 2008 |
| Priority date | — |
| Expiry date | Nov 23, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/831
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
It is an object of the present invention to provide a highly reliable and high-quality semiconductor element by effectively preventing the migration of silver to a nitride semiconductor when an electrode main entirely or mostly of silver having high reflection efficiency is formed in contact with a nitride semiconductor layer. A semiconductor element comprises a nitride semiconductor layer, an electrode connected to said nitride semiconductor layer, and an insulating film covering at least part of said electrode, wherein the electrode comprises: a first metal film including silver or a silver alloy and in contact with the nitride semiconductor layer; and a second metal film completely covering the first metal film, and the insulating film comprises a nitride film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.