Piezoelectric thin-film resonator and method for producing the same
US7436102B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 10, 2005 |
| Grant date | Oct 14, 2008 |
| Priority date | — |
| Expiry date | Sep 6, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49155
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A method for producing a piezoelectric thin-film resonator includes forming a sacrificial layer on a substrate, performing a plasma treatment on the sacrificial layer so that the surface roughness (Ra) of end surface portions of the sacrificial layer is about 5 nm or less, forming a strip-shaped dielectric film so as to be continuously disposed on the surface of the substrate and the end surface portions and the principal surface of the sacrificial layer, forming a piezoelectric thin-film area including a lower electrode, an upper electrode, and a piezoelectric thin-film disposed therebetween so that a portion of the lower electrode and a portion of the upper electrode surface each other at an area on the dielectric film, the area being disposed on the upper portion of the sacrificial layer, and removing the sacrificial layer to form an air-gap between the substrate and the dielectric film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.