Semiconductor laser device and method for manufacturing the same
US7436870B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 1, 2005 |
| Grant date | Oct 14, 2008 |
| Priority date | — |
| Expiry date | Sep 4, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2304/04
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser device includes: an n-type cladding layer, an active layer, and a p-type cladding layer, each being a III-V group compound semiconductor, supported on a substrate of n-type GaAs, a p-type band discontinuity reduction layer of a III-V group compound semiconductor on the p-type cladding layer, and a p-type GaAs cap layer on the band discontinuity reduction layer. The p-type cladding layer, the p-type band discontinuity reduction layer, and the p-type cap layer are each doped with a p-type dopant which is lower in diffusivity than Zn. The p-type band discontinuity reduction layer has a concentration of a p-type dopant lower in diffusivity than Zn of 2.5×1018 cm−3 or higher to attain desired device characteristics, for example, high power output and efficiency.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.