Light-emitting diode and method for manufacturing the same
US7439091B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 22, 2007 |
| Grant date | Oct 21, 2008 |
| Priority date | — |
| Expiry date | Feb 22, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/882
Abstract
A light-emitting diode (LED) and a method for manufacturing the same are described. The method for manufacturing the LED comprises the following steps. An illuminant epitaxial structure is provided, in which the illuminant epitaxial structure has a first surface and a second surface on opposite sides, and a substrate is deposed on the first surface of the illuminant epitaxial structure. A metal layer is formed on the second surface of the illuminant epitaxial structure. An anodic oxidization step is performed to oxidize the metal layer, so as to form a metal oxide layer. An etching step is performed to remove a portion of the metal oxide layer, so as to form a plurality of holes in the metal oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.