CMOS image sensor and method for fabricating the same
US7439095B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 30, 2005 |
| Grant date | Oct 21, 2008 |
| Priority date | — |
| Expiry date | Aug 10, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/811
Abstract
A CMOS image sensor includes a substrate including a sensing part and a peripheral driving part; a first insulating interlayer formed over an entire surface of the substrate; a first metal line formed on the first insulating interlayer in each of the sensing and peripheral driving parts; a second insulating interlayer formed over the entire surface of the substrate including the first metal line; a second metal line formed on the second insulating interlayer in each of the sensor and peripheral drive parts; an etch-stop layer formed over the entire surface of the substrate including the second metal line; a third insulating interlayer formed on the peripheral driving part of the etch-stop layer; a third metal line formed on the third insulating interlayer; a fourth insulating interlayer formed on the third insulating interlayer including the third metal line, to be disposed in the peripheral driving part; and a fourth metal line formed on the fourth insulating interlayer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.