Growth of in-situ thin films by reactive evaporation
US7439208B2 · kind B2 · utility
7Cited by
11References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 1, 2003 |
| Grant date | Oct 21, 2008 |
| Priority date | — |
| Expiry date | Aug 20, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49014
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of forming MgB2 films in-situ on a substrate includes the steps of (a) depositing boron onto a surface of the substrate in a deposition zone; (b) moving the substrate into a reaction zone containing pressurized, gaseous magnesium; (c) moving the substrate back into the deposition zone; and (d) repeating steps (a)-(c). In a preferred embodiment of the invention, the substrate is moved into and out of the deposition zone and the reaction zone using a rotatable platen.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.