Semiconductor light-emitting device and method for fabricating the same
US7439552B2 · kind B2 · utility
28Cited by
0References
4Claims
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Key dates
| Filing date | Jul 25, 2006 |
| Grant date | Oct 21, 2008 |
| Priority date | — |
| Expiry date | Nov 6, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/831
Abstract
A semiconductor light-emitting device includes a light-emitting layer and a light extraction layer formed on the light-emitting layer and made of a resin material containing particles. The maximum size of each of the particles contained in the light extraction layer is smaller than the wavelength of emitted light penetrating through the light extraction layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.