Semiconductor device and method for fabricating the same
US7439554B2 · kind B2 · utility
0Cited by
5References
7Claims
0Family size
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Key dates
| Filing date | Dec 6, 2004 |
| Grant date | Oct 21, 2008 |
| Priority date | — |
| Expiry date | Jan 13, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8063
Abstract
A semiconductor device comprises a photoelectric conversion portion formed on a semiconductor substrate, a first transparent film provided on the photoelectric conversion portion, and an interlayer lens provided on the first transparent film at a position corresponding to the photoelectric conversion portion, in which the interlayer lens has a higher refractive index than the first transparent film, and at least one of upper and lower surfaces of a second transparent film formed with a thin film multilayer structure of two or more types of compounds is formed to have a protruded shape.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.