Substrate driven field-effect transistor
US7439556B2 · kind B2 · utility
26Cited by
64References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 29, 2005 |
| Grant date | Oct 21, 2008 |
| Priority date | — |
| Expiry date | Sep 5, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/01
Abstract
A substrate driven field effect transistor (FET) and a method of forming the same. In one embodiment, the substrate driven FET includes a substrate having a source contact covering a substantial portion of a bottom surface thereof and a lateral channel above the substrate. The substrate driven FET also includes a drain contact above the lateral channel. The substrate driven FET still further includes a source interconnect that connects the lateral channel to the substrate operable to provide a low resistance coupling between the source contact and the lateral channel.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.