Semiconductor device
US7439578B2 · kind B2 · utility
3Cited by
2References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 28, 2006 |
| Grant date | Oct 21, 2008 |
| Priority date | — |
| Expiry date | Dec 28, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/127
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a trench formed in a surface of a semiconductor substrate. A conductor is embedded in the trench. A conductive layer is arranged adjacent to the trench on the surface of the semiconductor substrate. Semiconductor elements, which include sources provided by one of the conductor and the conductive layer and drains provided by the other one of the conductor and the conductive layer, are formed in a semiconductor element formation region. A planar wiring layer is embedded in the semiconductor substrate under the entire semiconductor element formation region and connected to the conductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.