Semiconductor device having via connecting between interconnects
US7439623B2 · kind B2 · utility
16Cited by
2References
48Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 2, 2004 |
| Grant date | Oct 21, 2008 |
| Priority date | — |
| Expiry date | Oct 4, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A first insulating film is provided between a lower interconnect and an upper interconnect. The lower interconnect and the upper interconnect are connected to each other by way of a via formed in the first insulating film. A dummy via or an insulating slit is formed on/in the upper interconnect near the via.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.