Vertical GaN-based LED and method of manufacturing the same
US7442569B2 · kind B2 · utility
11Cited by
1References
6Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 25, 2007 |
| Grant date | Oct 28, 2008 |
| Priority date | — |
| Expiry date | Jul 25, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/817
Abstract
Provided are a vertical GaN-based LED and a method of manufacturing the same. The vertical GaN-based LED includes an n-electrode. An AlGaN layer is formed under the n-electrode. An undoped GaN layer is formed under the AlGaN layer to provide a two-dimensional electron gas layer to a junction interface of the AlGaN layer. A GaN-based LED structure includes an n-type GaN layer, an active layer, and a p-type GaN layer that are sequentially formed under the undoped GaN layer. A p-electrode is formed under the GaN-based LED structure. A conductive substrate is formed under the p-electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.