System and method for uniform multi-plane silicon oxide layer formation for optical applications
US7442589B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 17, 2006 |
| Grant date | Oct 28, 2008 |
| Priority date | — |
| Expiry date | Aug 19, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02255
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods and systems for growing uniform oxide layers include an example method including growing a first layer of oxide on first and second facets of the substrate, with the first facet having a faster oxide growth rate. The oxide is removed from the first facet and a second oxide layer is grown on the first and second facets. Removing the oxide from the first facet includes shielding the second facet and exposing the substrate to a deoxidizing condition. The second facet is then exposed to receive the second oxide layer. Areas having differing oxide thicknesses are also grown by repeatedly growing oxide layers, selectively shielding areas, and removing oxide from exposed areas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.