Methods and batch type atomic layer deposition apparatus for forming dielectric films and methods of manufacturing metal-insulator-metal capacitors including the dielectric films
US7442604B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 15, 2006 |
| Grant date | Oct 28, 2008 |
| Priority date | — |
| Expiry date | Nov 29, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02205
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided are methods of manufacturing dielectric films including forming a first dielectric film on a wafer using atomic layer deposition (ALD) in a first batch type apparatus, forming a second dielectric film on the first dielectric film using atomic layer deposition in a second batch type apparatus, wherein the second dielectric film has a higher crystallization temperature than the first dielectric film and forming a third dielectric film on the second dielectric film using atomic layer deposition in a third batch type apparatus. Methods of manufacturing metal-insulator-metal (MIM) capacitors using the methods of forming the dielectric films and batch type atomic layer deposition apparatus for forming the dielectric films are also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.