Patent · US Expired

Method for producing a semiconductor device and resulting device

US7442635B2 · kind B2 · utility

4Cited by

8References

22Claims

0Family size

Assignee

INTERUNIVERSITAIR MICRO-ELECTRONICA CENTRUM VZW · BE

Inventors

Johan Das · Nieuwrode, BE
Wouter Ruythooren · Haacht, BE

Key dates

Filing date	Jan 30, 2006
Grant date	Oct 28, 2008
Priority date	—
Expiry date	Apr 27, 2026

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/19043
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The present invention is related to a method of producing a semiconductor device and the resulting device. The method is suitable in the first place for producing high power devices, such as High Electron Mobility Transistors (HEMT), in particular HEMT-devices with multiples source-gate-drain groups or multiple base bipolar transistors. According to the method, the interconnect between the source contacts is not produced by air bridge structures, but by etching vias through the semiconductor layer directly to the ohmic contacts and applying a contact layer on the backside of the device.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.