Method of forming electrode for semiconductor device
US7442642B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 16, 2005 |
| Grant date | Oct 28, 2008 |
| Priority date | — |
| Expiry date | Apr 4, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/10329
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The semiconductor device of the present invention and the method of the present invention, for forming the semiconductor device, form: a penetrating hole in a semiconductor wafer which has a first insulating film and an electrode pad formed on a first face of the semiconductor wafer, the penetrating hole being immediately below the electrode pad; and a second insulating film on an inner wall of the penetrating hole and on a second face of the semiconductor wafer. In forming the second insulating film, electrodeposition using the semiconductor wafer as a cathode is used. After the second insulating film is formed, the first insulating film is etched using the second insulating film as a mask, the back face of the electrode pad is exposed, and a conductor layer, acting as a penetrating electrode, is formed in the penetrating hole.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.