Electromagnetic radiation emitting semiconductor chip and procedure for its production

US7442966B2 · kind B2 · utility

Assignee

• OSRAM GmbH · DE

Inventors

• Stefan Bader · Fort Collins, US
• Dominik Eisert · Regensberg, DE
• Berthold Hahn · Hemau, DE
• Stephan Kaiser · Regensburg, DE

Key dates

• Filing date: Oct 24, 2006
• Grant date: Oct 28, 2008
• Expiry date: Nov 21, 2026

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/841

Abstract

A semiconductor chip which emits electromagnetic radiation is presented. The chip includes an epitaxially produced semiconductor layer stack based on nitride semiconductor material, which includes an n-conducting semiconductor layer, a p-conducting semiconductor layer, and an electromagnetic radiation generating region, which is arranged between these two semiconductor layers. The chip further includes a base on which the semiconductor layer stack is arranged, and a mirror layer, which is arranged between the semiconductor layer stack and the base. The n-conducting semiconductor layer faces away from the base, and the n-conducting semiconductor layer or an outcoupling layer located on the n-conducting semiconductor layer has a radiation-outcoupling surface which, in turn, includes planar outcoupling sub-surfaces, which are positioned obliquely with respect to a main plane of the radiation-generating region and each form an angle of between 15° and 70° with this plane.