Semiconductor substrate, substrate for semiconductor crystal growth, semiconductor device, optical semiconductor device, and manufacturing method thereof
US7442999B2 · kind B2 · utility
4Cited by
4References
16Claims
0Family size
Assignee
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Key dates
| Filing date | Mar 29, 2006 |
| Grant date | Oct 28, 2008 |
| Priority date | — |
| Expiry date | Nov 8, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor substrate includes: a semiconductor crystal layer grown on one face of a substrate; and a stress relaxation layer, which is formed on the other face opposite to the one face and the side face of the substrate and applies stress to the substrate in the same direction as the direction of stress which the semiconductor crystal layer applies to the substrate. In this case, stress of the semiconductor crystal layer to the substrate is offset. Therefore, warp of the semiconductor substrate and generation of cracks are inhibited.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.