RF variable gain amplifier
US7443241B2 · kind B2 · utility
10Cited by
3References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 28, 2006 |
| Grant date | Oct 28, 2008 |
| Priority date | — |
| Expiry date | Oct 10, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03G7/06
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A RF variable gain amplifier with an extended linear tuning range is disclosed. The variable gain amplifier employs a wide swing cascode mirror formed by two cascode transistors and two gain transistors. The two cascode transistors track each other, so are the two gain transistor. The gain transistors operate on the saturation region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.