High frequency amplifier having an attenuator
US7443243B2 · kind B2 · utility
2Cited by
4References
16Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 7, 2007 |
| Grant date | Oct 28, 2008 |
| Priority date | — |
| Expiry date | Sep 7, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2200/72
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
An amplifier for amplifying a reception signal, having an input terminal for inputting the reception signal from an antenna, has a grounded gate transistor of which gate is grounded in a high frequency manner and of which source is connected to the input terminal, a load element disposed between the drain of the transistor and a power supply, an output terminal connected to a connection node between the drain and the load element, and an attenuator selectively inserted between the drain and the output terminal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.