Integrated semiconductor memory devices with generation of voltages
US7443739B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 1, 2007 |
| Grant date | Oct 28, 2008 |
| Priority date | — |
| Expiry date | May 3, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2207/2227
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An integrated semiconductor memory device includes a clock terminal that applies an external clock signal. Read and write accesses are controlled synchronously with the external clock signal. A frequency detector is connected to the clock terminal to detect the frequency of the external clock signal. The frequency detector circuit generates a control signal in a manner dependent on the frequency of the external clock signal, the control signal being used to drive a controllable voltage generator, which generates a level of an internal supply voltage in a manner dependent on the control signal, from which supply voltage further control and supply voltages are derived. The integrated semiconductor memory device makes it possible to adapt the level of internally generated voltages of the integrated semiconductor memory device to the frequency of the external clock signal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.