Surface emitting semiconductor laser diode and manufacturing method thereof
US7443899B2 · kind B2 · utility
5Cited by
7References
13Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 12, 2004 |
| Grant date | Oct 28, 2008 |
| Priority date | — |
| Expiry date | Dec 17, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/18394
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A surface emitting semiconductor laser diode includes a substrate, a first reflective layer formed over the substrate, an active layer formed over the first reflective layer, a second reflective layer formed over the active layer, a first conductive layer having an opening therein and formed over the second reflective layer, and an additional reflective layer formed over the second reflective layer so as to cover the opening, wherein the additional reflective layer is covered, at least at a portion thereof, with a second conductive layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.