Patent · US Active

Method of manufacturing semiconductor device, acid etching resistant material and copolymer

US7445881B2 · kind B2 · utility

7Cited by
12References
39Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 27, 2007
Grant dateNov 4, 2008
Priority date—
Expiry dateFeb 27, 2027

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/82
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Disclosed is an acid etching resistance material comprising a compound having a repeating unit represented by the following general formula (1):

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.