Methods for fabricating current-carrying structures using voltage switchable dielectric materials
US7446030B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 14, 2004 |
| Grant date | Nov 4, 2008 |
| Priority date | — |
| Expiry date | Jun 27, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2203/105
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A method is provided for fabricating current-carrying formation on substrates. The method includes providing a substrate including a layer of a voltage switchable dielectric material, forming a mask over the layer of the voltage switchable dielectric material, and forming an electrically conductive layer. The mask includes gaps and the electrically conductive layer is formed in the gaps. The voltage switchable dielectric material has a characteristic voltage and the electrically conductive layer is formed by applying a voltage in excess of the characteristic voltage to the substrate and depositing the electrically conductive material through an electrochemical process such as electroplating.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.