Aerosol misted deposition of low dielectric organosilicate films
US7446055B2 · kind B2 · utility
1Cited by
15References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 17, 2005 |
| Grant date | Nov 4, 2008 |
| Priority date | — |
| Expiry date | Feb 16, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02282
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
This invention relates to an improvement in a deposition process for producing low dielectric films having a dielectric constant of 3, preferably <2.7 and lower. The process comprises the steps:
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.