Etch resistant wafer processing apparatus and method for producing the same
US7446284B2 · kind B2 · utility
6Cited by
4References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 30, 2005 |
| Grant date | Nov 4, 2008 |
| Priority date | — |
| Expiry date | Jun 25, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T279/23
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A wafer processing apparatus is fabricated by depositing a film electrode onto the surface of a base substrate, the structure is then overcoated with a protective coating film layer comprising at least one of a nitride, carbide, carbonitride or oxynitride of elements selected from a group consisting of B, Al, Si, Ga, refractory hard metals, transition metals, and combinations thereof. The film electrode has a coefficient of thermal expansion (CTE) that closely matches the CTE of the underlying base substrate layer as well as the CTE of the protective coating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.