Nonvolatile memory devices and methods of manufacturing the same
US7446333B2 · kind B2 · utility
4Cited by
2References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 29, 2006 |
| Grant date | Nov 4, 2008 |
| Priority date | — |
| Expiry date | Jan 28, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
Abstract
Nonvolatile memory devices and methods of manufacturing the same are provided. The nonvolatile memory devices may include an oxide layer formed of a resistance conversion material, a lower electrode, a nano-wire layer formed of a transition metal on the lower electrode, and an upper electrode formed on the oxide layer. According to example embodiments, a reset current may be stabilized by unifying a current path on the oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.