Radiation-emitting semiconductor element
US7446341B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 24, 2003 |
| Grant date | Nov 4, 2008 |
| Priority date | — |
| Expiry date | Jul 24, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/835
Abstract
A radiation-emitting semiconductor component having a semiconductor body (1), which has an active zone (2), in which, for the purpose of electrical contact connection, a patterned contact layer (3) is applied on a surface of the semiconductor body. Interspaces (4) are distributed over the contact layer (3) and are provided for the purpose of forming free areas (5) on the surface which are not covered by the contact layer (3). The free areas (5) are covered with a mirror (6). The separation of the two functions of contact connection and reflection makes it possible to achieve a particularly high performance of the component.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.