Light emitting diode having conductive reflecting layer
US7446342B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 8, 2006 |
| Grant date | Nov 4, 2008 |
| Priority date | — |
| Expiry date | Jul 30, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/819
Abstract
There is provided a semiconductor light emitting diode and a method of manufacturing the same that enable voltage in the forward direction to be decreased while allowing light extraction efficiency to be improved. This semiconductor light emitting diode is formed by a substrate, a light emitting portion that is disposed on one main surface of the substrate, a first electrode that is disposed on the light emitting portion, a pad electrode that is disposed on the first electrode, concave portions that are formed on at least a portion of the one main surface of the substrate, and a conductive layer that is formed from a conductive material that is disposed in the concave portions and reflects light emitted from the light emitting portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.