Phosphor converted light emitting device
US7446343B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jan 13, 2007 |
| Grant date | Nov 4, 2008 |
| Priority date | — |
| Expiry date | May 3, 2027 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC04B2235/9661
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A phosphor converted light emitting device includes a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region, the light emitting layer being configured to emit light having a first peak wavelength; a first phosphor configured to emit light having a second peak wavelength; and a second phosphor configured to emit light having a third peak wavelength. The second phosphor is an Eu3+-activated phosphor, configured such that in the excitation spectrum at 298K and 1.013 bar, a maximum intensity in a wavelength range between 460 nm and 470 nm is at least 5% of a maximum intensity in a wavelength range between 220 nm to 320 nm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.