Radiation-emitting semiconductor chip, method for production thereof and radiation-emitting component

US7446344B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Michael Fehrer · Bad Abbach, DE
• Volker Harle · Hemau, DE
• Frank Kuhn · Munich, DE
• Ulrich Zehnder · Regensburg, DE

Key dates

• Filing date: Sep 27, 2002
• Grant date: Nov 4, 2008
• Expiry date: May 24, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/12042
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A radiation-emitting semiconductor chip, having a multilayer structure (100) containing a radiation-emitting active layer (10), and having a window layer (20), which is transmissive to a radiation emitted by the active layer (10) and is arranged downstream of the multilayer structure (100) in the direction of a main radiating direction of the semiconductor component. The window layer (20) has at least one peripheral side area (21), which, in the course from a first main area (22) facing the multilayer structure (100) in the direction toward a second main area (23) remote from the multilayer structure (100), firstly has a first side area region (24) which is beveled, curved or stepped in such a way that the window layer widens with respect to the size of the first main area (22). A peripheral side area (11) of the multilayer structure (100) and at least a part of the beveled, curved or stepped first side area region (24) are coated with a continuous electrically insulating layer (30). A radiation-emitting component is disclosed having a chip of this type, and also disclosed is a method for simultaneously producing a multiplicity of such chips.