Method of inverting polarization by controlling defect density or degree of order of lattice points
US7446930B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 10, 2004 |
| Grant date | Nov 4, 2008 |
| Priority date | — |
| Expiry date | Jun 18, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F2202/20
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A problem to be solved is to provide a method of forming domain inverted regions of short period in a ferroelectric single crystal in a controllable time period of application of voltage and an optical wavelength conversion element using the same.A solving means of it solves the problem by forming (i) a control layer having a larger defect density Dcont1 than the defect density Dferro of a ferroelectric single crystal (Dferro<Dcont1) or forming (ii) a control layer having a lower degree of order of lattice points than the degree of order of lattice points of the ferroelectric single crystal on a face perpendicular to the direction of polarization of the ferroelectric single crystal in the ferroelectric single crystal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.